Web23 de dez. de 2024 · Abstract. Using a new fabrication technique, NIMS has developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new FET also exhibits normally-off behavior (i.e., electric current flow through the transistor ceases when no gate voltage is … WebHigh hole mobility of 1,2-bis[4′-(diphenylamino)biphenyl-4-yl]-1,2-diphenylethene in field effect transistor† Zujin Zhao , ab Zhefeng Li , c Jacky W. Y. Lam , a Jose-Luis Maldonado , d Gabriel Ramos-Ortiz , d Yang Liu , a Wangzhang Yuan , a Jianbin Xu , e Qian Miao * c …
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Web4 de dez. de 2012 · High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to … WebHá 11 horas · EXPERTS are on high alert amid fears a crack at the bottom of the ocean could trigger an apocalyptic earthquake. The hole, just 50 miles off the coast of the US state of Oregon, is spewing hot liqu… ctx lag screw
Journal of Materials Chemistry C
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