WebJul 3, 2024 · Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high … WebA novel approach to effectively suppress the “polysulfide shuttle” in Li–S batteries is presented by designing a freestanding, three-dimensional graphene/1T MoS 2 (3DG/TM) heterostructure with highly efficient electrocatalysis properties for lithium polysulfides (LiPSs). The 3DG/TM heterostructure is constructed by few-layered graphene …
Crystals Free Full-Text Graphene to Advanced MoS2: A Review …
WebApr 8, 2024 · 作者:X-MOL 2024-04-08. 2004年,石墨烯(graphene)的首次发现,开创了二维半导体材料科学的新纪元。经过十多年的发展,诸多二维层状材料,包括半金属性的 … WebMay 24, 2024 · Graphene has shown great promise in many electronic devices and systems since it was discovered. However, doping control limits its use in devices. For addressing this problem, graphene/MoXY (X/Y = S, Se, Te and X ≠ Y) heterostructures have been investigated in this work. We analyze electronic and optical properties of the … population panama city beach fl
大面积高质量MoS2/graphene垂直异质结的人工构筑- X-MOL资讯
WebDec 27, 2024 · Tuning heterointerfaces between hybrid phases is a very promising strategy for designing advanced energy storage materials. Herein, a low-cost, high-yield, and scalable two-step approach is reported to prepare a new type of hybrid material containing MoS 2 /graphene nanosheets prepared from ball-milling and exfoliation of commercial … WebDec 15, 2024 · Using a simple model then allows for the adhesion energy to be found. The substrates tested are SiO2, Si3N4, gold, and platinum. Gold is found to have the highest adhesion energy per area of 7687.10 and 1207.26mJm-2 for graphene and MoS2 respectively.}, doi = {10.1002/pssa.202400512}, journal WebAug 4, 2024 · Herein, we propose a Gr/MoS2 heterojunction platform, i.e., junction field-effect transistor (JFET), that enhances the carrier mobility by a factor of ~ 10 (~ 100 cm2 V−1 s−1) compared to that ... sharon farron