Graphene barristor
Webheterojunction of graphene with a semiconductor (i.e., a graphene-silicon Schottky diode or barristor) has been proposed by Ref. 19. In this device, the drive current is modulated by tuning the Schottky barrier height at the graphene-silicon interface by adjusting the gate voltage. As a result, an extremely high on–off ratio (∼105) can be ... WebJun 1, 2024 · We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and ...
Graphene barristor
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WebJun 1, 2012 · Graphene barristor, a triode device with a gate-controlled Schottky barrier. Despite several years of research into graphene electronics, sufficient on/off current … WebMar 15, 2024 · A Graphene/InN nanowire based mixed dimensional barristor device has been demonstrated with a Schottky barrier that can be widely tuned using gate voltage and molecular doping. Ultra high sensitivity detection of gases down to sub-ppb concentration has been demonstrated using conductive and capacitive modes of sensing, highlighting …
WebJun 1, 2012 · Graphene is a zero-gap semiconductor whose Fermi energy can be adjusted by electrostatic gating owing to its two-dimensional (2D) nature ( 3 – 5 ). Because … Download PDF - Graphene Barristor, a Triode Device with a Gate-Controlled … WebJun 2, 2024 · Description of the graphene barristor model. Fitted curve and simulated results for the electrical characteristics of the graphene–ZnO barristor ( PDF) …
WebFinally we combine work function tuning of graphene and an ideal contact between graphene and TMDs to propose an ionic barristor design that can tune the work function of graphene with a much wider margin than current barristor designs, achieving a dynamic switching among p-type ohmic contact, Schottky contact, and n-type ohmic contact in one ... WebMar 1, 2024 · 3.2. Electronic and optoelectronic properties of Gr/ReSe heterojunction barristor. Fig. 2 a and b shows a schematic diagram and an optical image of the vertical barristor, respectively. A ReSe 2 flake was transferred onto single-layer p-doped graphene on a 300 nm SiO 2 substrate. A barristor was created by forming an adjustable Schottky …
WebJul 22, 2013 · We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO${}_{2}$ (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device …
WebAug 1, 2015 · This paper presents a small-signal model for graphene barristor, a promising device for the future nanoelectronics industry. Because of the functional similarities to the conventional FET transistors, the same configuration and parameters, as those of FETs, are assumed for the model.Transconductance, output resistance, and parasitic capacitances … birmingham population statisticsWebJan 26, 2024 · We have successfully demonstrated a graphene–ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5–0.73 eV, and an on–off ratio of up to 10 7 was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of … birmingham porsche driving schoolWebAug 1, 2024 · The proposed piezotronic graphene barristor through high capacitive electrolyte coupling offers an efficient means for seamless and adaptive interactions … dangerous forklift picturesWebOct 9, 2024 · Multi-Threshold Voltages Graphene Barristor-Based Ternary ALU. Abstract: Ternary logic circuits can provide simpler circuit structure and a significant reduction in … birmingham porsche serviceWebOct 15, 2024 · Abstract: In this work, a large-area MoS 2 /graphene barristor device, with an electrically tunable Schottky barrier height, has been studied for detection of various gaseous analytes. The Schottky barrier height could be modulated by over 0.65 eV, allowing the drain current to be tuned by many orders of magnitude. Using diluted NO 2 and NH 3 … birmingham population growthWebMay 1, 2016 · Yang et al. (p. 1140 , published online 17 May) now show that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor ... dangerous game bathroom sceneWebDec 17, 2015 · Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140–1143 (2012) Article CAS ADS Google Scholar birmingham post and mail newspaper